ZIB

Treffer pro Seite

Treffer 1 - 1 | 1 Treffer

Alles auswählen Exportieren

Digitale Medien

Molecular-beam epitaxial growth and characterization of silicon-doped AlGaAs and GaAs on (311)A GaAs substrates and their device applications (1992)

Li, W. Q. ; Bhattacharya, P. K. ; Kwok, S. H. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 72 (1992), S. 3129-3135

zur Merkliste hinzufügen auf der Merkliste

Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The possibility of reliable and reproducible p-type doping of (311)A GaAs by Si during molecular-beam epitaxial growth and the application of such doping in the realization of high-performance electronic devices have been investigated. It is seen that p-type doping upto a free hole concentration of 4×1019 cm−3 can be obtained under conditions of low As4 flux and high (≥660 °C) growth temperatures. n-type doping up to a level of 1×1019 cm−3 is obtained at low (≤500 °C) growth temperature and high As4 flux. The p-type doping is extremely reproducible and the incorporation of Si atoms into electrically active As sites is at least 95%. The doping behavior has been studied and confirmed by Raman spectroscopy. n-p-n heterojunction bipolar transistors grown by all Si doping exhibit excellent current voltage characteristics and a common emitter current gain β=240. Doped channel p-type heterojunction field-effect transistors have transconductance gm=25 mS/mm.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.351474

Bibliothek	Standort	Signatur	Band/Heft/Jahr	Verfügbarkeit

Andere fanden auch interessant ...

Artikel (Nationallizenzen)

Volltext

Treffer 1 - 1 | 1 Treffer