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Investigation of the heteroexpitaxial structures {p-3C/n-6H}-SiC (1997)

Lebedev, A. A. ; Savkina, N. S. ; Tregubova, A. S. ; [et al.]

Springer

Semiconductors 31 (1997), S. 926-928

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ISSN: 1063-7826

Source: Springer Online Journal Archives 1860-2000

Topics: Electrical Engineering, Measurement and Control Technology , Physics

Notes: Abstract The parameters of the epitaxial structures {3C/6H}-SiC have been investigated. The heteroepitaxial growth was conducted by sublimation epitaxy in an open system. The presence of the 3C polytype was confirmed by x-ray investigations. The capacitance-voltage and current-voltage characteristics and the electroluminescence spectra of the p-n structures were investigated. It was found that a thin, slightly doped, defective p-6H-SiC layer was formed between p-3C-SiC and n-6H-SiC in the heteropolytypic structures; this layer detetmined the electrical properties of the diode structures.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1134/1.1187154

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