ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The dark conductivity and photoconductivity along with pulsed electron spin resonance have been measured over a wide temperature range with a high crystallinity hydrogenated microcrystalline silicon (μc-Si: H) sample. The transport mechanism in μc-Si: H is discussed on the basis of these measurements. Striking similarities in the temperature dependences of the dark conductivity and photoconductivity between μc-Si: H and some well-studied materials, such as hydrogenated amorphous silicon, suggest that at low temperatures hopping of carriers between localized states dominates the transport properties of μc-Si: H.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187511
