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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 66 (1998), S. 1159-1163 
    ISSN: 1432-0630
    Keywords: PACS: 61.16.Ch; 68.35.Ct; 52.75.Rx; 62.40.+i; 61.72.Hh
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: rms (PFM), with no obvious anisotropic structures at the surface. After exposure of the B-doped diamond(100) to the H-plasma, the roughness increases dramatically, and pronounced anisotropic structures appear, these being closely aligned with the crystallographic axis’ and planes. An exposure for 3 minutes to the plasma leads to an increase of the roughness to 2–4 nmrms (STM), and a ‘brick-wall’ pattern appears, formed by weak cusps running along 〈110〉. Very frequently, the cusps are replaced by ‘negative’ pyramids that are bordered by {11X} facets. After an exposure of an additional 5 minutes, the surface roughness of the B-doped samples increases further to 20–40 nmrms (STM), and frequently exhibits a regular pattern with structures at a characteristic length scale of about 100 nm. Those structures are aligned approximately with 〈110〉 and they are faceted with faces of approximately {XX1}. These results will be discussed in terms of strain relaxation, similar to the surface roughening observed on SiGe/Si and anisotropic etching.
    Type of Medium: Electronic Resource
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