ISSN:
1600-5775
Source:
Crystallography Journals Online : IUCR Backfile Archive 1948-2001
Topics:
Geosciences
,
Physics
Notes:
The structure of implantation-induced damage in Ge has been investigated using high resolution extended X-ray absorption fine structure spectroscopy(EXAFS). EXAFS data analysis was performed with the Cumulant Method. For the crystalline-to-amorphous transformation, a progressive increase in bond-length was observed without the presence of an asymmetry in interatomic distance distribution (RDF). Beyond the amorphization threshold the RDF was dose dependent and asymmetric, where the bond-length and asymmetry increased as functions of ion dose. Such an effect was attributed to the formation of three- and five-fold coordinated atoms within the a morphous phase. Low-temperature thermal annealing resulted in structural relaxation of the amorphous phase as evidenced by a reduction in the centroid ,asymmetry and width of the RDF, as consistent with a reduction in the fraction of non four-fold coordinated atoms.The results have been compared to other EXAFS studies of amorphous Ge, and it issuggested thatthe range of bond-lengths reported therein is related to the sample preparation method and state of relaxation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1107/S0909049500012620
