Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
80 (2002), S. 2556-2558
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present microscopic maps of the electrostatic potential in Si/SiGe/Si patterned structures of the type used in heterostructure bipolar transistors. By obtaining such maps before and after anneals typically used in device processing, we directly reveal the "vertical" and "lateral" redistribution of boron during device fabrication. Such data can be compared with the results of process simulation to extract the fundamental parameters for dopant diffusion in complex device structures. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1467712
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