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Strong luminescence from Tamm states in modulation-doped superlattices (2001)

Henriques, A. B.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 78 (2001), S. 691-693

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Calculations are presented for the photoluminescence spectrum of InP/In0.53Ga0.47As superlattices doped with Si. When doping is confined to the inner barriers, the photoluminescence is dominated by transitions between Tamm states in the electron and valence bands, which contribute with an optical band at energies higher than the In0.53Ga0.47As band gap. These results are in good agreement with experimental observations. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1346627

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