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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2934-2936 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we introduce conducting atomic force microscopy (C-AFM) for the quantitative electrical characterization of ultrathin Al2O3 films on a nanometer scale length. By applying a voltage between the AFM tip and the conductive Co substrate direct tunneling currents in the sub pA range are measured simultaneously to the oxide surface topography. From the microscopic I–V characteristics the local oxide thickness can be obtained with an accuracy of 0.03 nm. A conversion scheme was developed, which allows the calculation of three-dimensional maps of the local electrical oxide thickness with sub-angstrom thickness resolution and nanometer lateral resolution from the tunneling current images. Local tunneling current variations of up to three decades are correlated with the topography and local variations of the electrical oxide thickness of only a few angstroms. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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