Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 1713-1715
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Extended x-ray absorption fine-structure measurements at the In K edge of amorphous InP are presented. The presence of chemical disorder in the form of like-atom bonding has been unambiguously demonstrated in stoichiometric InP amorphized by ion implantation. In–In bonding comprised 14%±4% of the In–atom constituent bonds. Also, relative to the crystalline value of four P atoms, an increase in the total In coordination number to 4.16±0.32 atoms was observed for the amorphous phase, as composed of 3.56±0.19 P and 0.60±0.13 In atoms. Experimental results were consistent with recent ab initio structural calculations and, furthermore, demonstrated that amorphous InP is best described by a Polk-like continuous random network, containing both even- and odd-membered rings. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123664
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