Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 1556-1558
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The thermal outdiffusion of hydrogen from undoped ZnSe layers grown by metalorganic vapor phase epitaxy has been investigated. The samples were grown using dimethyl-zinc-triethylamine, di-tert.-butylselenide as precursors with hydrogen and nitrogen as carriergas. The typical atomic hydrogen concentrations of the samples is nH=1018 cm−3, which originates from pyrolysis products of the organometallic precursors. The incorporation from the carrier gas is negligible. Control samples grown by molecular beam epitaxy in the presence of atomic and molecular hydrogen in the growth chamber showed no hydrogen incorporation. The outdiffusion process was investigated using transient effusion experiments. The experiments are explained by diffusion controlled effusion with a diffusion coefficient of D(T)=1.4×10−11 exp[−0.33(±0.03) eV/(kBT)]cm2/s. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122203
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