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Relaxation times in InAs/AlSb quantum wells (1998)

Markelz, A. G. ; Asmar, N. G. ; Gwinn, E. G.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 72 (1998), S. 2439-2441

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have measured energy relaxation and longitudinal-optical (LO) phonon emission times in modulation-doped InAs quantum wells driven by high dc fields, and by intense ac fields at frequencies from 0.49 to 0.66 terahertz. We find that for electron temperatures between 50 and 200 K, LO phonon emission dominates energy relaxation. We determine a large net LO phonon emission time, indicating a strong LO phonon bottleneck both in high dc and in intense terahertz fields. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.121377

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