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Digitale Medien

Lattice parameter in Si1−yCy epilayers: Deviation from Vegard's rule (1998)

Berti, M. ; De Salvador, D. ; Drigo, A. V. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 72 (1998), S. 1602-1604

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The precise C content of a series of Si1−yCy epilayer samples (0〈y〈0.012) was determined by resonant backscattering experiments using a 4He+ ion beam at 5.72 MeV. This beam energy is more suitable for the determination of the C content than the previously used 4.265 MeV. From the correlation of these investigations with x-ray diffraction experiments, a significant deviation of the lattice parameter variation in Si1−yCy from Vegard's rule between Si and diamond or β-SiC was observed, which amounts up to 30% or 13%, respectively, for y〈0.012. This negative deviation is in agreement with recent theoretical predictions by Kelires. © 1998 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.121127

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