ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on optical experiments in self-assembled InAs quantum dots grown on (100) and (311)A GaAs surfaces which were precovered with Te. We observe a strong reduction of the luminescence intensity with increasing Te coverage in the (100)-oriented samples. The Te-induced luminescence reduction is, however, much smaller in the (311)A oriented samples. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.119597