Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 3975-3977
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Experimental studies of InAs heterostructures illuminated by far-infrared (FIR) radiation reveal an abrupt increase in the charge density for FIR intensities above a threshold value that rises with increasing frequency. We attribute this charge density rise to interband impact ionization in a regime in which ωτm∼1, where τm is the momentum relaxation time, and f=ω/2π is the FIR frequency. The dependence of the density rise on the FIR field strength supports this interpretation, and gives threshold fields of 3.7–8.9 kV/cm for the frequency range 0.3–0.66 THz. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117842
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |