Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 3763-3765
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have fabricated a strain-sensing cryogenic field-effect transistor (FET) from a GaAs/AlGaAs heterostructure containing a near-surface two-dimensional electron gas. The FET has transconductance 100 μS and a small signal drain-source resistance 10 MΩ. The charge noise has a flat spectrum at high frequencies with magnitude 0.2e/(square root of)Hz and 1/f noise corner less than 300 Hz. The piezoelectric effect couples stress in the substrate to the electron density in the FET channel giving an electrical response to applied strain. Strain sensitivity was measured to be 2×10−9/(square root of)Hz, limited by FET noise. Integrated strain-sensing FETs offer advantages for detecting small forces in GaAs/AlGaAs microelectromechanical systems. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.115999
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