ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report pump-and-probe measurements of the electron intersubband lifetime (T1) in an AlGaAs/GaAs heterostructure using a picosecond pulsed far-infrared laser. The subband spacing (11 meV) is less than the optical-phonon energy. Time-resolved measurements yield intersubband lifetimes ranging from T1=1.1±0.2 ns to T1=0.4±0.1 ns depending on measurement conditions. Results are in agreement with previous lifetime measurements on the same sample using continuous excitation at intensities ≤1 W/cm2. The steady-state measurements yielded shorter lifetimes at high excitation intensities, possibly due to carrier heating leading to intersubband scattering by optical phonon emission. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116683