ZIB

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Kinetics of photoconductivity in n-type GaN photodetector (1995)

Kung, P. ; Zhang, X. ; Walker, D. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 67 (1995), S. 3792-3794

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: High-quality ultraviolet photoconductive detectors have been fabricated using GaN layers grown by low-pressure metalorganic chemical vapor deposition on (11⋅0) sapphire substrates. The spectral responsivity remained nearly constant for wavelengths from 200 to 365 nm and dropped sharply by almost three orders of magnitude for wavelengths longer than 365 nm. The kinetics of the photoconductivity have been studied by the measurements of the frequency-dependent photoresponse and photoconductivity decay. Strongly sublinear response and excitation-dependent response time have been observed even at relatively low excitation levels. This can be attributed to redistribution of the charge carriers with increased excitation level. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.115385

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit