Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 31-33
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We investigated the effect of hydrogen ion shower doping on polycrystalline silicon thin-film transistors (p-Si TFTs). Hydrogen atoms were introduced to the channel region of p-Si TFTs by PH3/H2 ion shower doping of the source/drain contact. Hydrogen concentration in the channel region can be controlled by altering the gate metal thickness. Hydrogen atoms affect the TFT's threshold voltage shifts until it becomes negative, in n-type TFTs. The threshold voltage shift depends on the hydrogen content of the channel region in p-Si TFTs. This is explained by the existence of Si−3 trap states in the grain boundaries. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114171
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