Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 956-958
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report improved performance in semi-insulating GaAs/AlGaAs quantum well based spatial light modulators grown by molecular beam epitaxy. The optically addressed modulator reported here are of a new design and have significantly higher spatial resolution than previously reported devices. Strong diffraction efficiencies are described for spatial periods as fine as 2.6 μm at framing rate as high as 600 kHz. Two modulators are characterized, one with x=0.1 and the other with x=0.3 for the AlxGa1−xAs quantum barriers of the superlattices.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112160
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