Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 2220-2222
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxial growth of SimGen/Si(001) strained-layer superlattices by magnetron sputter epitaxy is reported. Films of excellent crystal quality resulted from low-temperature sputter growth at TS=350 °C, as is evidenced by Rutherford backscattering spectrometry minimum channeling yields χmin=3%. The absence of relaxation was demonstrated by Raman spectroscopy. Raman results on the first-order longitudinal-optical Ge–Ge phonon proved pure Ge to be present in a Si30Ge6 superlattice, which indicates an interface broadening of the order of 2 monolayers. High resolution transmission electron microscopy confirmed the formation of smooth and well-defined interfaces between subsequent Si and Ge layers. © 1994 American Institute of Physics
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112766
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