Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
63 (1993), S. 571-573
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Carrier recombination processes in thin-film epitaxial ZnSe are investigated using a transient-grating technique. For photoexcitation levels in the 1017–1018 cm−3 range the dominant recombination mechanism is found to be radiative, described by a rate coefficient of 8×10−9 cm3 s−1. For densities exceeding approximately 2×1018 cm−3 ultrafast grating recovery is observed, accompanied by line narrowing of the near-band-edge blue photoluminescence; this is interpreted as being due to stimulated radiative recombination.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109980
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