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Origin of the low doping efficiency of nitrogen acceptors in ZnSe grown by metalorganic chemical vapor deposition (1993)

Kamata, A. ; Mitsuhashi, H. ; Fujita, H.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 63 (1993), S. 3353-3354

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The origin of nitrogen acceptor compensation in ZnSe:N has been studied by secondary ion mass spectrometry (SIMS) and infrared absorption (FTIR) measurements. Nitrogen-doped ZnSe layers were grown by atmospheric pressure metalorganic chemical vapor deposition. Ammonia gas was used as a nitrogen source. SIMS analysis has revealed that hydrogen was incorporated only into the ZnSe:N layer with the same concentration as nitrogen. FTIR measurements at 11 K strongly suggest the presence of N—H bonding at 3193 cm−1. It is concluded that hydrogen passivation is responsible for the acceptor compensation.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.110142

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