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Γ-X intervalley transfer in single AlAs barriers under hydrostatic pressure (1993)

Carbonneau, Y. ; Beerens, J. ; Cury, L. A. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 62 (1993), S. 1955-1957

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have investigated the contribution of Γ-X intervalley transfer to the tunneling current in single AlAs barrier heterostructures grown on a GaAs substrate by measuring I-V characteristics at low temperature and under hydrostatic pressure up to 9 kbar. The application of hydrostatic pressure affects the contribution of the Γ-X transfer process to the total tunneling current at a given bias voltage. Experimental results are compared with current-voltage characteristics calculated with a model taking into account the Γ-X transfer at heterointerfaces. Only transfer processes involving the longitudinal X valley in AlAs are considered in the calculations. Very good agreement is found for low bias conditions at all pressures.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.109502

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