Electronic Resource
Carnahan, R. E.
;
Maldonado, M. A.
;
Martin, K. P.
;
[et al.]
Nogaret, A.
;
Higgins, R. J.
;
Cury, L. A.
;
Maude, D. K.
;
Portal, J. C.
;
Chen, J. F.
;
Cho, A. Y.
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 1385-1387
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present an experimental study of intravalley and intervalley transport in an InAs/AlSb/InAs/AlSb/InAs double barrier resonant tunneling diode at liquid helium temperatures. This work reports the first observation of intervalley tunneling through an InAs Γ-point quasibound state confined by AlSb X-point barriers. The incident energy of tunneling electrons was tuned by a transverse magnetic field (0〈B〈17 T). Self-consistent calculations of the current-voltage relation and a model that includes a transverse wave vector contribution to the magnetic field behavior of the resonances are used to describe the experimental results. From this, we determine that the device current is composed of Γ-point InAs electrons tunneling through X-point AlSb barriers (with large longitudinal effective mass) as well as Γ-point AlSb barriers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108687
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