ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Cation antisite defects produced in semi-insulating GaAs by 30-MeV electron irradiation were studied using a photoluminescence (PL) method. PL emissions associated with a double acceptor GaAs, lying at 78 and 200 meV above the valence band, were observed at 860 and 935 nm in 600 °C annealed samples. The former emission is a prominent spectrum with its phonon replica at 880 nm, whereas the latter is buried in broad emissions consisting of the defect complexes such as the VAs-CAs complex. The electron irradiation-induced GaAs defects are ∼102 times smaller than those produced in neutron irradiated semi-insulating GaAs.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107763