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Confined phonons in GaAs/AlAs superlattices with periodically corrugated interfaces (1992)

Shields, A. J. ; Nötzel, R. ; Cardona, M. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 60 (1992), S. 2537-2539

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Using resonant Raman spectroscopy we have studied novel GaAs/AlAs superlattice (SL) structures, grown on (113) substrates, where the GaAs and AlAs layer widths vary periodically on a nanometer scale along the lateral [11¯0] direction. We observe sharp confined LO phonon lines for both (113) and simultaneously grown (001) SLs, for a range of different layer widths, whose frequencies map the bulk GaAs LO dispersion. The confined phonon lines of the (113) SLs show a side peak, which can be assigned to a mode with finite k vector parallel to the layers, induced by the lateral periodicity.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.106905

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