Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
58 (1991), S. 1428-1430
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We demonstrate via low-temperature electron transport measurements the realization of a high-mobility ((approximately-greater-than)300 000 cm2/V s) two-dimensional electron gas in unintentionally doped InAs/AlSb single 120 A(ring) quantum wells grown on GaAs substrates by molecular beam epitaxy. Magnetoresistance and Hall measurements at T∼0.4 K show a well-formed quantum Hall effect, with effects due to spin splitting observed at filling factors as high as ν=17. The electron densities of these wells could be reduced by a factor ∼5 by using the negative persistent photoconductivity of these samples.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105188
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