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Heteroepitaxial ultrafine wire-like growth of InAs on GaAs substrates (1991)

Yazawa, M. ; Koguchi, M. ; Hiruma, K.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 58 (1991), S. 1080-1082

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We demonstrate heteroepitaxial ultrafine wire-like growth of InAs. Ultrafine InAs whiskers with diameters less than 20 nm are grown selectively on SiO2-patterned GaAs substrates using metalorganic vapor phase epitaxy. These InAs nanowhiskers grow epitaxially with a growth axis parallel to the 〈111〉As dangling bond direction of the GaAs substrate surface irrespective of substrate orientation.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.104377

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