Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 749-751
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have grown and characterized heteroepitaxial films of InP on GaAs. We demonstrate that by using flow-rate modulation epitaxy to grow the interface layer in a two-step process, we can improve the quality of heteroepitaxy films. The full widths at half maximum of the x-ray rocking curve and the 10 K photoluminescence spectrum for a 6.2-μm-thick InP/GaAs are 144 arcsec and 1.28 meV, respectively.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101795
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