Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 766-768
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The formation of indium-donor pairs (donors: P, As, Sb) in silicon is identified by perturbed angular correlation spectroscopy. After the electron capture decay of the 111 In probe atoms to 111 Cd, the electric field gradient (EFG) is measured at the corresponding cadmium-donor pairs. For all three complexes a similar temperature dependence of the EFG is observed which can be explained quantitatively by a model based on the charge state of the cadmium-donor acceptors. The corresponding energy levels are given.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102265
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