Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 2230-2232
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Photocurrent spectra of InxGa1−xAs/GaAs multiple quantum well structures grown by molecular beam epitaxy are studied in the presence of electric fields perpendicular to the heterointerface. Several Δn=0 allowed and Δn≠0 forbidden excitonic transitions are observed. Both negative and positive shifts of exciton transitions are found. Good agreement is found between the photocurrent observations and calculations using a multiband effective-mass approach, taking into account the strain-induced splitting.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101132
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