Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 1947-1949
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We describe the reactive ion etching of InP using a mixture of Br2 and either N2 or Ar. We report the first fabrication of straight vertical walls in InP at a very fast etching rate of 2 μm/min. By using a mixture of Br2 and Ar and raising the substrate temperature, smooth walls are obtained. To demonstrate that the etched walls can be used as laser mirrors, we fabricated etched-faceted lasers with threshold currents of 19.0 mA for a laser with one etched and one cleaved facet and 26.6 mA for a laser with two etched facets.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101202
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