Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 728-730
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Results for two new channel waveguide phase modulators formed by impurity-induced disordering (IID) with Zn diffusion in AlGaAs/GaAs are presented. One device utilizes side diffusion into ridges of single quantum well material and the other utilizes surface diffusion into double-heterostructure material. Waveguide loss for both TE and TM polarizations, and effective index steps calculated from observed mode profiles are reported. TE/TM mode conversion was observed without bias under certain conditions. Initial results for phase modulation are in agreement with expectations and appear not to be affected by the IID.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99816
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |