Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
91 (2002), S. 5902-5908
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the effect of rapid thermal annealing (RTA) on the photoluminescence (PL) properties of GaNxAs1−x/GaAs structures. In particular, a blueshift of the PL peak energy is observed when annealing the samples. The results are examined as a consequence of a RTA-induced nitrogen diffusion inside the GaNxAs1−x material rather than diffusion out of the alloy, which homogenizes initial nitrogen composition fluctuations. We propose a simple model that describes the RTA-induced blueshift of the low temperature PL peak energy. This model is in good agreement with experimental results and is consistent with recent studies in which lateral composition fluctuations in the GaNAs alloy were reported. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1467957
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