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    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6545-6548 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of highly dense SnO2 ceramic varistors are believed to be caused by the existence of potential barriers at the grain boundary. A complex plane analysis technique (to eliminate the influence of trapping activity associated with the conductance term observed via depression angle of a semicircular relaxation in the complex capacitance plane), allied with an approached Mott–Schottky model, are used to demonstrate that the potential barriers at the grain boundary are Schottky-type barriers in SnO2 varistors such as those observed in the traditional ZnO varistor. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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