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Optical properties of the ZnSe1−xTex epilayers grown by molecular beam epitaxy (1998)

Yang, C. S. ; Hong, D. Y. ; Lin, C. Y. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 83 (1998), S. 2555-2559

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: ZnSe1−xTex epilayers were grown on a GaAs (001) substrate with 0°, 3°, 10°, and 15° tilts toward [110] by molecular beam epitaxy. The energy gap was found to increase with the substrate tilt angle. In addition, a Te-bound exciton and an exciton bound to the Te cluster in the photoluminescence spectra have been identified. The threshold temperature for the observation of the Te-bound exciton in the photoluminescence spectrum of ZnSe1−xTex epilayers was found to increase with the Te concentration. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.367015

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