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    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 8051-8054 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of a Si-doped Al0.3Ga0.7As alloy are studied as a function of the Si dopant concentration by means of photoluminescence measurements. The photoluminescence spectra show peaks due to electron Si acceptors and Si-related complex-defects transitions, which we tentatively attribute to Si acceptor coupled to an As vacancy (SiAs-VAs) and Si donor coupled to a Ga(Al) vacancy (SiIII-VIII). We show that the importance of each of these defects to the alloy optical properties is strongly dependent on the growing parameters. Spectrum for a planar-doped sample also showing peaks related to Si complex defects is presented. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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