Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
75 (1994), S. 3978-3981
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Deep levels related to chromium in n-type silicon have been investigated using deep level transient spectroscopy (DLTS) and concentration profile measurements. The DLTS measurement reveals four electron traps of EC−0.22, EC−0.28, EC−0.45, and EC−0.54 eV in chromium-doped samples. The trap of EC−0.22 eV is a donor due to interstitial chromium. The other three traps are observed near the surface region of samples etched with an acid mixture containing HF and HNO3 and annihilate after annealing at 175 °C for 30 min. The origin of these traps has been studied by isochronal annealing and various chemical treatments. It is demonstrated that the three electron traps are due to complexes of interstitial chromium and hydrogen.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.356018
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