Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 7114-7117
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present a new doping technique using an ion shower doping system with a bucket ion source. Phosphorus atoms were implanted in polycrystalline silicon from room temperature to 300 °C. Sheet resistances were significantly reduced by raising the implantation temperature. With a crystal fraction of 85%, sheet resistance was 5×102 S−1/(D'Alembertian) as implanted. These effects were not due to pure thermal annealing by ion beam heating. A significant improvement was found in sheet resistance as a result of averaging the impurity profile by radiation enhanced diffusion and low temperature recrystallization of the implanted region by collision of atoms.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.355026
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