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Proceed reservation?

Due to technical work, the interlibrary loan service wont be available from March 28th until presumably April 3rd.
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7114-7117 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a new doping technique using an ion shower doping system with a bucket ion source. Phosphorus atoms were implanted in polycrystalline silicon from room temperature to 300 °C. Sheet resistances were significantly reduced by raising the implantation temperature. With a crystal fraction of 85%, sheet resistance was 5×102 S−1/(D'Alembertian) as implanted. These effects were not due to pure thermal annealing by ion beam heating. A significant improvement was found in sheet resistance as a result of averaging the impurity profile by radiation enhanced diffusion and low temperature recrystallization of the implanted region by collision of atoms.
    Type of Medium: Electronic Resource
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