ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have measured impact ionization coefficients, α and β, in 150 A(ring) pseudomorphically strained materials for the first time. The measurements were made on specially designed lateral p-i-n diodes. α and β in lattice-matched GaAs layers are found to be lower than those in strained In0.2Ga0.8As and higher than those in strained In0.15Ga0.63Al0.22As. β is larger than α in all the samples. The results are discussed in terms of the changes in the band structure due to biaxial strain.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.353874