Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
68 (1990), S. 3795-3797
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We analyzed the Raman spectra and x-ray diffraction of two GaAs/Al0.3Ga0.7As superlattices grown by molecular-beam epitaxy on a 4 ° misoriented (001) GaAs substrate and an exactly (001)-oriented GaAs substrate respectively. From the frequency shifts of the longitudinal-optical- (LO) confined phonons in the Raman spectra and the variation in linewidths of both the LO-confined phonons and the satellite peaks in x-ray diffraction, we found that the 4 ° misorientation of the GaAs substrate from (001) toward [110] direction improves the interface quality of the superlattices.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.346283
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