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Outdiffusion of Be during rapid thermal annealing of high-dose Be-implanted GaAs (1990)

Baratte, H. ; Sadana, D. K. ; de Souza, J. P. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 67 (1990), S. 6589-6591

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The outdiffusion of Be implanted into GaAs has been found to be identical after capless or capped (Si3N4 or SiO2 ) rapid thermal annealing (RTA) at 900–1000 °C and to depend on the Be dose and its proximity to the surface. The outdiffusion is more pronounced when the Be implant is shallow (〈0.1 μm) and/or the Be+ dose is high (〉1×1015 cm−2 ). It is demonstrated that the Be outdiffusion is driven by the presence of a highly damaged surface layer. Auger results suggest the formation of a BeOx compound at the surface of a high-dose (1×1016 cm−2 ) Be-implanted sample that underwent capless RTA at 1000 °C/1 s. It appears that BeOx formation occurs when the outdiffused Be interacts with the native Ga/As oxides during annealing. All the Be remaining in the GaAs after a 〉900 °C/2 s RTA is electrically active.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.345093

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