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Determination of interfacial stress during thermal oxidation of silicon (1989)

Murray, Paul ; Carey, G. F.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 65 (1989), S. 3667-3670

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We develop a theoretical model to obtain the stress in oxide films occurring during thermal oxidation of silicon. The model results in a prediction of 4.5×109 dyn/cm2 for the interfacial stress, in excellent agreement with laboratory measurements. Moreover, we establish generally that the interfacial stress is proportional to 1−γ, where γ is the molar volume ratio of reactant to product. For silicon oxidation, γ=4/9, and the resulting stress is compressive.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.342592

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