Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
64 (1988), S. 4775-4777
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Aluminium Schottky contacts on n-Si were subjected to Ar+ ion bombardment, followed by a thermal anneal at 350 °C. This resulted in a marked improvement in the diode character of the implanted contacts. α-particle channeling analysis showed that very little damage remained after annealing, while AES showed only slight mixing of the Al and Si.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.341197
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