Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
60 (1986), S. 2149-2153
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Successful operation of a p-n-p AlGaAs heterojunction bipolar transistor at temperatures up to 800 K (527 °C) has been achieved. The device was fabricated from molecular-beam epitaxy grown material and features an Al0.45Ga0.55As emitter and Al0.25Ga0.75As base and collector regions. At room temperature a common emitter current gain of 12 is obtained, which reduces to ∼3 at 800 K. Weak emission of light is seen from the base region with λ=7170 A(ring) at 300 K, in agreement with the expected band gap for Al0.25Ga0.75As of 1.74 eV.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.337168
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