Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
60 (1986), S. 4165-4168
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the observation of a morphological defect structure, "cross-hatch'' and the experimental circumstances that lead to its occurence during GaAs homoepitaxy. Photoluminescence, x-ray diffraction and transmission electron miscroscopy (TEM) results obtained on cross-hatched samples are presented and discussed in regards to the nature and origin of the defect structure.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.337500
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