Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
59 (1986), S. 1761-1763
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Single-crystal layers of ZnS have been grown on GaP substrates in a hydrogen transport system. By the addition of In to the reactant agents, the orientation dependence of the growth rates of ZnS are reversed for (111)A and (111)B substrates. The improvement of crystallinity of the grown layers can be seen by the surface morphology observation and x-ray and reflection high-energy electron diffraction analyses. These phenomena are undoubtedly caused by the In-incorporation effects during the epitaxial growth of ZnS.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.336443
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