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    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1761-1763 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal layers of ZnS have been grown on GaP substrates in a hydrogen transport system. By the addition of In to the reactant agents, the orientation dependence of the growth rates of ZnS are reversed for (111)A and (111)B substrates. The improvement of crystallinity of the grown layers can be seen by the surface morphology observation and x-ray and reflection high-energy electron diffraction analyses. These phenomena are undoubtedly caused by the In-incorporation effects during the epitaxial growth of ZnS.
    Type of Medium: Electronic Resource
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