Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
57 (1985), S. 2299-2301
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Depth distributions of 300-keV protons implanted in n-type GaAs and characteristics of the associated damage in the crystalline material have been obtained. Range profiles of the implanted 1H ions as a function of substrate implantation temperature have been determined using secondary ion mass spectrometry for fluences of 5×1014 and 5×1015 cm−2. The projected range for the protons was approximately 2.7 μm for the room temperature implants, but a significant rearrangement of the 1H atoms occurred during elevated temperature implantation. While cross-sectional transmission electron microscopy showed no evidence of crystal damage in as-implanted wafers, plan-view measurements revealed platelike damage structures in the surface region (〈 1μm).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.334328
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