ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
3C-SiC p-type epilayers were grown to thicknesses of 1.5, 3, 6 and 10 μm on 2.5° off-axisSi(001) substrates by chemical vapor deposition (CVD). Silane and propane were used as precursors.Structural analysis of epilayers was performed using transmission electron microscopy (TEM),high-resolution x-ray diffractometry (HRXRD), and Raman spectroscopy. TEM showed defectdensities (stacking faults, twins and dislocations) decreasing with increasing distance from the SiC/Siinterface as the lattice mismatch stress is relaxed. This observation was corroborated by a monotonicdecrease in HRXRD peak width (FWHM) from 780 arcsecs (1.5 μm thick epilayer) to 350 arcsecs (10μm thick epilayer). Significant further reduction in x-ray FWHM is possible because the minimumFWHM detected is greater than the theoretical FWHM for SiC (about 12 arcsecs). Ramanspectroscopy also indicates that the residual biaxial in-plane strain decreases with increasing epilayerthickness initially, but becomes essentially constant between 6 and 10 μm. Structural defect densityshows the most significant reduction in the first 2 μm of growth. Phosphorus implantation was usedto generate n+/p junctions for the measurement of the critical electric field in 3C-SiC. Based oncurrent-voltage analyses, the critical electric field in p-type 3C-SiC with a doping of 2x1017 cm-3 is1.3x106 V/cm
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.431.pdf
